Positron lifetime measurements have been performed on silicon as a function of dopant concentration with the pulsed low-energy positron system (PLEPS II). The lifetime spectra were analysed with a modified version of Positronfit. Values have been obtained for the lifetimes and the corresponding intensities as a function of implantation energy for each sample. Using a new approach for the solution of the diffusion-trapping-model, the mean lifetime and the surface lifetime intensity are used to calculate the diffusion coefficient D and surface transition rate v. Both parameters vary only smoothly in n-doped and weakly p-doped material. For p-type silicon in the concentration range from 1015 to 1021 cm-3 both values first decrease by two orders of magnitude, leading to a minimum in D and v at    «

Positron lifetime measurements have been performed on silicon as a function of dopant concentration with the pulsed low-energy positron system (PLEPS II). The lifetime spectra were analysed with a modified version of Positronfit. Values have been obtained for the lifetimes and the corresponding intensities as a function of implantation energy for each sample. Using a new approach for the solution of the diffusion-trapping-model, the mean lifetime and the surface lifetime intensity are used to ca...    »