Bauer-Kugelmann, Werner; Duffy, Jon A.; Störmer, J.; Kögel, Gottfried; Triftshäuser, Werner
Dokumenttyp:
Zeitschriftenartikel / Journal Article
Titel:
Diffusivity and surface transition rate of positrons in crystalline silicon as a function of dopant concentration
Zeitschrift:
Applied Surface Science
Jahrgang:
116
Jahr:
1997
Seiten von - bis:
231-235
Sprache:
Englisch
Abstract:
Positron lifetime measurements have been performed on silicon as a function of dopant concentration with the pulsed low-energy positron system (PLEPS II). The lifetime spectra were analysed with a modified version of Positronfit. Values have been obtained for the lifetimes and the corresponding intensities as a function of implantation energy for each sample. Using a new approach for the solution of the diffusion-trapping-model, the mean lifetime and the surface lifetime intensity are used to calculate the diffusion coefficient D and surface transition rate v. Both parameters vary only smoothly in n-doped and weakly p-doped material. For p-type silicon in the concentration range from 1015 to 1021 cm-3 both values first decrease by two orders of magnitude, leading to a minimum in D and v at «
Positron lifetime measurements have been performed on silicon as a function of dopant concentration with the pulsed low-energy positron system (PLEPS II). The lifetime spectra were analysed with a modified version of Positronfit. Values have been obtained for the lifetimes and the corresponding intensities as a function of implantation energy for each sample. Using a new approach for the solution of the diffusion-trapping-model, the mean lifetime and the surface lifetime intensity are used to ca... »