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Document type:
Konferenzbeitrag / Conference Paper
Title:
Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques
Collection title:
Proceedings of SPIE - The International Society for Optical Engineering
Collection subtitle:
Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes; Salt Lake City, UT; United States; 21 October 2002 through 25 October 2002
Collection editors:
Kolbesen, B. O.; Claeys, C.; Stallhofer, P.; Tardif, F.; Schroder, D. K.; Shaffner, T. J.; Tajima, M.; Rai - Choudhury, P.
Series title:
The International Society for Optical Engineering
Series volume:
5133
Conference title:
Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices (2002, Salt Lake City, UT)
Venue:
Salt Lake City, UT
Year of conference:
2002
Date of conference beginning:
21.10.2002
Date of conference ending:
25.10.2002
Publishing institution:
Society of Photo-optical Instrumentation Engineers
Year:
2003
Pages from - to:
223-232
Language:
Englisch
Keywords:
Data reduction ; Dielectric materials ; Gates (transistor) ; Metallorganic chemical vapor deposition ; Permittivity ; Silicon compounds ; Atomic layer deposition (ALD) ; Hafnium compounds
Abstract:
The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.
ISSN:
0277-786X
Article ID:
Code 61548
Department:
Fakultät für Luft- und Raumfahrttechnik
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik
Chair:
Dollinger, Günther
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