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Document type:
Konferenzbeitrag / Conference Paper
Title:
Recent developments in nuclear methods in support of semiconductor characterization
Collection title:
Proceedings of SPIE - The International Society for Optical Engineering
Collection subtitle:
Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes; Salt Lake City, UT; United States; 21 October 2002 through 25 October 2002
Collection editors:
Kolbesen, B. O.; Claeys, C.; Stallhofer, P.; Tardif, F.; Schroder, D. K.; Shaffner, T. J.; Tajima, M.; Rai - Choudhury, P.
Series title:
The International Society for Optical Engineering
Series volume:
5133
Conference title:
Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices (2002, Salt Lake City, UT)
Venue:
Salt Lake City, UT
Year of conference:
2002
Date of conference beginning:
21.10.2002
Date of conference ending:
25.10.2002
Publishing institution:
Society of Photo-optical Instrumentation Engineers
Publisher:
SPIE
Year:
2003
Pages from - to:
50-62
Language:
Englisch
Keywords:
Dosimetry ; Ion implantation ; Radiation damage ; Rutherford backscattering spectroscopy ; Secondary ion mass spectrometry ; Semiconductor materials ; Sputtering ; Thin films ; Nuclear materials ; Semiconductor device manufacture
Abstract:
The analysis of thin materials related to semiconductors using nuclear techniques was presented. Decreasing the beam energy from the conventional energy of 2 MeV to lower than 0.5 MeV or lower transforms rutherford backscattering (RBS) to a near surface analysis technique. It was concluded that problems of material characterization could be solved using secondary ion mass spectrometry (SIMS) and dedicated nuclear techniques that provide good insight in the material behavior in shallow layers.
ISSN:
0277-786X
Department:
Fakultät für Luft- und Raumfahrttechnik
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik
Chair:
Dollinger, Günther
Open Access yes or no?:
Nein / No
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