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Authors:
Ludsteck, Alexandra; Schulze, Jorg; Eisele, Ignaz; Dietl, Waltraud; Chung, Hin Yiu; Nényei, Zsolt; Bergmaier, Andreas; Dollinger, Günther 
Document type:
Konferenzbeitrag / Conference Paper 
Title:
Nitrogen profile and electrical properties of reoxidized thermally grown silicon nitrides 
Collection editors:
Sah, R. E.; Deen, M. J.; Zhang, J.; Yota, J.; Kamakura, Y. 
Title of conference publication:
Proceedings - Electrochemical Society 
Subtitle of conference publication:
207th ECS Meeting; Quebec; Canada; 16 May 2005 through 20 May 2005; Code 66429 
Series title:
Proceedings - Electrochemical Society 
Series volume:
PV 2005-01, 2005 
Volume:
207 
Issue:
412 
Conference title:
Electrochemical Society Meeting (207., 2005, Quebec) 
Venue:
Quebec ; Canada 
Year of conference:
2005 
Date of conference beginning:
16.05.2005 
Date of conference ending:
20.05.2005 
Publisher:
ECS - The Electrochemical Society 
Year:
2005 
Pages from - to:
232-241 
Language:
Englisch 
Keywords:
Current density ; Electric properties ; Nitrogen ; Oxidation, Elastic recoil detection measurements ; Tunneling current density ; Silicon nitride 
Abstract:
Starting from thermally grown Si3N4 we have examined the effects of dry and wet reoxidation in 100 
Department:
Fakultät für Luft- und Raumfahrttechnik 
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik 
Chair:
Dollinger, Günther 
Open Access yes or no?:
Nein / No 
Miscellaneous:
ECS Meeting Abstracts ; Film Preparation, Characterization, and Applications II - Abstract 412