Britton, David T.; Härting, M.; Knoesen, D.; Sigcau, Z.; Nemalili, F. P.; Ntsoane, T. P.; Sperr, Peter; Egger, Werner; Nippus, M.
Document type:
Zeitschriftenartikel / Journal Article
Title:
Microstructural defect characterisation of a-Si:H deposited by low temperature HW-CVD on paper substrates
Collection title:
3rd International Conference on Hot-Wire CVD Process, Utrecht Univ
Collection subtitle:
Utrecht, NETHERLANDS, AUG 23-27, 2004
Journal:
Thin Solid Films
Volume:
501
Issue:
1-2
Conference title:
International Conference on Hot-Wire CVD Process (3., 2004, Utrecht)
Venue:
Utrecht
Year of conference:
2004
Date of conference beginning:
23.08.2004
Date of conference ending:
27.08.2004
Year:
2006
Pages from - to:
79-83
Language:
Englisch
Abstract:
Hydrogenated amorphous silicon has been deposited on 80 g m(-2) wood-free paper, with and without an intermediate metallic interlayer, using low temperature hot wire chemical vapor deposition (HW-CVD). Electrical measurements show these layers to be of good quality. In this paper we cornpare the differences in microstructural properties of the two types of layer, concentrating on the influence of the substrates, including their effect on the deposition rate of the material and substrate temperature. During the deposition process, the metallized substrates reach a higher temperature than plain paper. Both X-diffiraction and positron annihilation lifetime studies indicate that the growth rate on the uncoated substrate is slightly higher than with prior metallization. There is no evidence of a crystalline phase or voids in the a-Si:H layers, and the internal defect structure is similar, with a dominant dangling-bond complex of similar size. «
Hydrogenated amorphous silicon has been deposited on 80 g m(-2) wood-free paper, with and without an intermediate metallic interlayer, using low temperature hot wire chemical vapor deposition (HW-CVD). Electrical measurements show these layers to be of good quality. In this paper we cornpare the differences in microstructural properties of the two types of layer, concentrating on the influence of the substrates, including their effect on the deposition rate of the material and substrate temperat... »