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Document type:
Zeitschriftenartikel / Journal Article
Title:
Nature of defects induced by Au implantation in hexagonal silicon carbide single crystals
Journal:
AIP Conference Proceedings
Volume:
1099
Conference title:
International Conference on Application of Accelerators in Research and Industry (20., 2008, Fort Worth, TX)
Conference title:
20th International Conference on Application of Accelerators in Research and Industry, Ft Worth, TX, AUG 10-15, 2008
Venue:
Fort Worth, TX
Year of conference:
2008
Date of conference beginning:
10.08.2008
Date of conference ending:
15.08.2008
Year:
2009
Pages from - to:
891-895
Language:
Englisch
Abstract:
Pulsed-slow-positron-beam-based positron lifetime spectroscopy was used to investigate the nature of vacancy defects induced by 20 MeV An implantation in single crystals 6H-SiC. Preliminary analysis of the data shows that at lower fluence, below 10(14) cm(-2), a positron lifetime of 220 ps has been obtained: it could be associated with the divacancy V(Si)-V(C) in comparison with the literature. At higher fluence, above 10(15) cm(-2), a positron lifetime of 260-270 ps, increasing with the inciden... »
ISBN:
978-0-7354-0633-9
ISSN:
0094-243X
DOI:
Department:
Fakultät für Luft- und Raumfahrttechnik
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik
Chair:
Dollinger, Günther
Open Access yes or no?:
Nein / No
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