We report quantitative ERD (Elastic Recoil Detection) measurements for the determination of the composition and distribution of the elements in nitride heterostructures. The investigated samples were MOCVD (molecular chemical vapor deposition) and PIMBE (plasma induced molecular beam epitaxy) grown HEMT (high electron mobility transistor) structures from Cornell University. We present the measured Al distribution parallel to the growth direction of Al xGa 1 xN layers of a thickness of about 10 to 30 nm and an Al concentration of    «

We report quantitative ERD (Elastic Recoil Detection) measurements for the determination of the composition and distribution of the elements in nitride heterostructures. The investigated samples were MOCVD (molecular chemical vapor deposition) and PIMBE (plasma induced molecular beam epitaxy) grown HEMT (high electron mobility transistor) structures from Cornell University. We present the measured Al distribution parallel to the growth direction of Al xGa 1 xN layers of a thickness of about 10 t...    »