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Document type:
Zeitschriftenartikel / Journal Article
Title:
Dependence of the doping efficiency on material composition in n-type a-SiOx:H
Journal:
Journal of Non-Crystalline Solids
Issue:
299-302, Part 1
Year:
2002
Pages from - to:
579-584
Language:
Englisch
Keywords:
Alloying ; Energy gap ; Hydrogenation ; Oxygen ; Phosphorus ; Plasma enhanced chemical vapor deposition ; Semiconductor doping, Co-ordination numbers ; Doping efficiencies, Amorphous silicon
Abstract:
Amorphous hydrogenated silicon suboxides (a-SiOx:H) deposited by plasma enhanced chemical vapour deposition (PECVD) have a band gap which can be tuned from 1.9 to 3.0 eV by varying the oxygen content from 0 to 50 at.
ISSN:
0022-3093
Department:
Fakultät für Luft- und Raumfahrttechnik
Institute:
LRT 2 - Institut für angewandte Physik und Messtechnik
Chair:
Dollinger, Günther
Open Access yes or no?:
Nein / No
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