Annealing processes of vacancy-type defects in epitaxial 6H SiC after 2 MeV electron irradiation and multiple He implantation have been investigated using positron annihilation spectroscopy. Vacancy-type defects are found to disappear in two annealing stages: at 500-800°C and 1200-1500°C. Silicon vacancies are the major positron trapping centers after electron irradiation. Two annealing stages after electron irradiation are attributed to the disappearance of isolated silicon vacancies and complexes associated with silicon vacancies, respectively. In He-irradiated SiC, divacancies are also generated in addition to silicon vacancies.    «

Annealing processes of vacancy-type defects in epitaxial 6H SiC after 2 MeV electron irradiation and multiple He implantation have been investigated using positron annihilation spectroscopy. Vacancy-type defects are found to disappear in two annealing stages: at 500-800°C and 1200-1500°C. Silicon vacancies are the major positron trapping centers after electron irradiation. Two annealing stages after electron irradiation are attributed to the disappearance of isolated silicon vacancies and comple...    »