IEEE Compound Semiconductor Integrated Circuit Symposium (2015, New Orleans, LA)
Venue:
New Orleans, LA, USA
Year of conference:
2015
Date of conference beginning:
11.10.2015
Date of conference ending:
14.10.2015
Year:
2015
Pages from - to:
1-4
Language:
Englisch
Abstract:
A 9-81/38-189 GHz dual-band divide-by-2 dynamic frequency divider is presented. The band switching is performed by switching a capacitance using PIN diodes. To the best of the authors' knowledge, this is the first band switching dynamic divider reported so far at such high frequencies. The divider is based on the regenerative frequency division principle followed by a buffer that can deliver -15.7dBm and -10dBm output power at 189 GHz and 9 GHz input frequency, respectively, which is sufficient to drive succeeding stages. The correct functionality of the divider over its entire operating frequency range is verified with lab measurements. The circuit is realized in a 130nm SiGe BiCMOS technology with fT=250 GHz. «
A 9-81/38-189 GHz dual-band divide-by-2 dynamic frequency divider is presented. The band switching is performed by switching a capacitance using PIN diodes. To the best of the authors' knowledge, this is the first band switching dynamic divider reported so far at such high frequencies. The divider is based on the regenerative frequency division principle followed by a buffer that can deliver -15.7dBm and -10dBm output power at 189 GHz and 9 GHz input frequency, respectively, which is sufficient... »