Physica Status Solidi (B) Basic Solid State Physics
Jahrgang:
254
Heftnummer:
11
Jahr:
2017
Sprache:
Englisch
Stichwörter:
MoS ; Raman spectroscopy ; suspended devices ; transition metal dichalcogenides
Abstract:
This report details the Raman spectroscopic characterization of suspended MoS2. MoS2 was grown by chemical vapor deposition (CVD) and then transferred onto holey substrates using a polymer-assisted technique, allowing measurement of suspended MoS2. Significant differences in the spectral characteristics of suspended and supported MoS2 were observed which are attributed to strain in the MoS2 suspended over the holey regions of the substrate. In particular, we investigate the low-frequency Raman spectrum of free-standing CVD-grown MoS2, and estimate the strain caused in the layers by suspension over holes. «
This report details the Raman spectroscopic characterization of suspended MoS2. MoS2 was grown by chemical vapor deposition (CVD) and then transferred onto holey substrates using a polymer-assisted technique, allowing measurement of suspended MoS2. Significant differences in the spectral characteristics of suspended and supported MoS2 were observed which are attributed to strain in the MoS2 suspended over the holey regions of the substrate. In particular, we investigate the low-frequency Raman s... »