Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors
Titel Konferenzpublikation:
2022 Device Research Conference (DRC)
Konferenztitel:
Device Research Conference (DRC) (2022, Columbus, Ohio)
Tagungsort:
Columbus, Ohio
Jahr der Konferenz:
2022
Datum Beginn der Konferenz:
26.06.2022
Datum Ende der Konferenz:
29.06.2022
Verlagsort:
Piscataway, N.J.
Verlag:
IEEE
Jahr:
2022
Sprache:
Englisch
Abstract:
Two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) have gained attention for neuromorphic computing applications due to their resistive switching (RS) behavior [1], [2]. Among TMDCs, platinum diselenide (PtSe2) stands out because it can be grown at complementary metal-oxide-semiconductor (CMOS) back-end-of-line (BEOL) compatible temperatures [3], [4] and it has shown excellent long-term stability [5]. However, its potential for RS remains largely unexplored with only preliminary proof-of-concept characteristics presented in a multilayer PtSe2 device with Au electrodes [6]. Here, we present the first detailed study on forming free RS in PtSe2 -based crosspoint (CP) memristors using CMOS-compatible electrodes. We find remarkably low switching fields (0.08 V /nm) likely related to our choice of electrode materials and excellent retention for at least several days.