AFM-IR and IR-SNOM for the Characterization of Small Molecule Organic Semiconductors
Journal:
The Journal of Physical Chemistry C
Volume:
124
Issue:
9
Year:
2020
Pages from - to:
5331-5344
Language:
Englisch
Abstract:
Vibrational spectroscopies, such as Raman and Fourier-transform infrared spectroscopy (FT-IR), are powerful tools for the characterization of organic semiconductor thin films and crystals in addition to X-ray diffraction and scanning atomic force microscopy. They enable the investigation of molecular orientation, polymorphism, doping levels, and intra- as well as intermolecular vibrational modes albeit without much spatial resolution. Two fundamentally different scanning probe techniques offer two-dimensional mapping of infrared-active modes with a spatial resolution below 100 nm: scattering-type scanning near-field optical microscopy (IR s-SNOM) and atomic force microscopy-infrared spectroscopy (AFM-IR). Here, we compare these two techniques with each other and to conventional FT-IR spectroscopy measurements with regard to their applicability to highly ordered molecular semiconductors. For this purpose … «
Vibrational spectroscopies, such as Raman and Fourier-transform infrared spectroscopy (FT-IR), are powerful tools for the characterization of organic semiconductor thin films and crystals in addition to X-ray diffraction and scanning atomic force microscopy. They enable the investigation of molecular orientation, polymorphism, doping levels, and intra- as well as intermolecular vibrational modes albeit without much spatial resolution. Two fundamentally different scanning probe techniques offer t... »