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Autoren:
Bachmann, Michael; Pahlke, Andreas; Axt, Carolin; Hinze, Bastian; Hansch, Walter 
Dokumenttyp:
Zeitschriftenartikel / Journal Article 
Titel:
CMOS field emission devices based on {111} silicon surfaces 
Zeitschrift:
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 
Jahrgang:
32 
Heftnummer:
Jahr:
2014 
Sprache:
Englisch 
Abstract:
A complementary metal-oxide-semiconductor process for field emission devices based on {111} silicon surfaces is presented. Structure sizes below 300 nm are produced with i-line lithography and sizes below 100 nm with an additional epitaxial layer. Dot- and line-based structures are investigated by molecular beam epitaxial growth, and {111}-apexes are formed by lateral limitation of the growth site. Qualitative agreement of the experimental observations with a simple model based on total free ene...    »
 
ISSN:
1071-1023 
Article-ID:
02B105 
Fakultät:
Fakultät für Elektrotechnik und Informationstechnik 
Institut:
EIT 2 - Institut für Physik 
Professur:
Hansch, Walter 
Open Access ja oder nein?:
Ja / Yes