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Autoren:
Herdl, Florian; Kueddelsmann, Maximilian J.; Schels, Andreas; Bachmann, Michael; Edler, Simon; Wohlfartsstätter, Dominik; Düsberg, Felix; Prugger, Alexander; Dillig, Michael; Dams, Florian; Schreiner, Rupert; Ó Coileáin, Cormac; Zimmermann, Stefan; Pahlke, Andreas; Duesberg, Georg S. 
Dokumenttyp:
Konferenzbeitrag / Conference Paper 
Titel:
Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels 
Herausgeber Sammlung:
IEEE 
Titel Konferenzpublikation:
2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC) 
Veranstalter (Körperschaft):
Massachusetts Institute of Technology Campus 
Konferenztitel:
International Vacuum Nanoelectronics Conference (36., 2023, Cambridge, Mass.) 
Tagungsort:
Cambridge, Mass., USA 
Jahr der Konferenz:
2023 
Datum Beginn der Konferenz:
10.07.2023 
Datum Ende der Konferenz:
13.07.2023 
Verlagsort:
Piscataway, NJ 
Verlag:
IEEE 
Jahr:
2023 
Seiten von - bis:
14-16 
Sprache:
Englisch 
Stichwörter:
Electron emitter ; carbon ; graphene-oxide-semiconductor ; atmospheric pressure ; chemical analytics 
Abstract:
In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was...    »
 
ISBN:
979-8-3503-0143-4 
Fakultät:
Fakultät für Elektrotechnik und Informationstechnik 
Institut:
EIT 2 - Institut für Physik 
Professur:
Düsberg, Georg S. 
Open Access ja oder nein?:
Nein / No