We present a novel silicon photomultiplier (SiPM) device integrated with high-speed two-transistor amplifier circuits on a single chip using standard 0.35-μm complementary metal—oxide semiconductor (CMOS) technology. These amplifiers are configured as current followers to reduce the output capacitance and improve the amplitude and slew rate of the output signal. The efficiency of this solution is approximately proportional to the size of the SiPM. Measurement results show that the single-photon timing resolution (SPTR) can be enhanced for the segmented SiPM with integrated amplifiers compared with a conventional analog CMOS SiPM that is designed with the same architecture but without an integrated amplifier. The proposed 1 × 1 mm² SiPM, featuring integrated circuitry, achieves an SPTR of 117 ±6 ps. In contrast, the conventional analog CMOS SiPM exhibits an SPTR of 221 ±6 ps using the slow output and 155 ±6 ps using the fast output. In addition to timing resolution, we characterize the CMOS SiPM device in terms of dark count rate (DCR), correlated delayed noise (CDN), gain, crosstalk (CT), and PDE. The device exhibits a high gain of 1.16 × 106 and low CT of 2.5%, but has a DCR of 2.8 Mhz/mm². The PDE, excluding CT and CDN, is 10.9% ± 0.3%.