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Dokumenttyp:
Zeitschriftenartikel / Journal Article
Titel:
Optimization of thin, nitrogen-rich silicon oxynitrides grown by rapid thermal nitridation
Zeitschrift:
Journal of the Electrochemical Society
Jahrgang:
152
Heftnummer:
5
Jahr:
2005
Seiten von - bis:
G334-G338
Sprache:
Englisch
Stichwörter:
Annealing; Deposition ; Field effect transistors ; MOS capacitors ; Nitrides ; Oxidation ; Substrates ; Thin films, Interface properties ; Oxynitrides ; Thermal nitridation ; Thermal processing, Silicon compounds
Abstract:
We have systematically examined nitrogen-rich silicon oxynitrides with a thickness of about 2 nm grown by rapid thermal nitridation in ammonia. In this paper the nitrogen incorporation as well as the electrical properties of the oxynitrides are discussed in detail. With the help of elastic recoil detection measurements it could be shown that the incorporated nitrogen concentration can be controlled precisely in a range between 20 and 60
ISSN:
0013-4651
DOI:
URL zum Inhalt:
Fakultät:
Fakultät für Luft- und Raumfahrttechnik
Institut:
LRT 2 - Institut für angewandte Physik und Messtechnik
Professur:
Dollinger, Günther
Open Access ja oder nein?:
Nein / No
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