Oxidation of nitrogen implanted substrates results in so called silicon-oxinitride layers (SixOyNz layers) which are dependent on implantation dose and energy always thinner than pure silicon-oxides (SiO2) produced under the same oxidation conditions. Elastic recoil detection profiles indicate that the implanted nitrogen diffuses out of the substrate into the silicon-oxide layer what improves the electrical quality of these insulators. The SixOyNz layers show lower Fowler-Nordheim tunnelling currents as well as lower interface state densities (Dit) than the corresponding SiO2 layers or N2O-silicon-oxinitride insulators. NH3-SixOyNz layers show the lowest Dit values because of H2-annealing effects but contain fixed charges.    «

Oxidation of nitrogen implanted substrates results in so called silicon-oxinitride layers (SixOyNz layers) which are dependent on implantation dose and energy always thinner than pure silicon-oxides (SiO2) produced under the same oxidation conditions. Elastic recoil detection profiles indicate that the implanted nitrogen diffuses out of the substrate into the silicon-oxide layer what improves the electrical quality of these insulators. The SixOyNz layers show lower Fowler-Nordheim tunnelling cur...    »