Aluminum oxide was deposited on arsenic doped silicon, using atomic layer deposition (ALD) with either a silicon oxide or a silicon nitride interface. The physical properties of these films were investigated by elastic-recoil-detection, X-ray-photoelectron-spectroscopy and transmission electron microscopy. Special focus was given to contamination of the film and the interface, crystallization and temperature effect on diffusion. The films remained stoichiometric and did not have Al-Al clusters, even post annealing steps. Evidence of diffusion of silicon and arsenic into the dielectric and of aluminum from the film was found. Carbon and hydrogen were seen in the film and at the interface as well, whereas hydrogen diffused out of the film to some extent due to anneal. Carbon content in the layer was reduced by using O 3 as oxidant. Grain size of crystalline Al2O3 films was in the order of film thickness.    «

Aluminum oxide was deposited on arsenic doped silicon, using atomic layer deposition (ALD) with either a silicon oxide or a silicon nitride interface. The physical properties of these films were investigated by elastic-recoil-detection, X-ray-photoelectron-spectroscopy and transmission electron microscopy. Special focus was given to contamination of the film and the interface, crystallization and temperature effect on diffusion. The films remained stoichiometric and did not have Al-Al clusters,...    »