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Autoren:
Brijs, Bert; Sajavaara, Timo; Giangrandi, Simone; Janssens, Tom; Conard, Thierry; Arstila, Kai; Nakajima, Kaoru; Kimura, Kenji; Bergmaier, Andreas; Dollinger, Günther; Vantomme, André; Vandervorst, Wilfried 
Dokumenttyp:
Zeitschriftenartikel / Journal Article 
Titel:
The analysis of a thin SiO2/Si3N4/SiO2 stack 
Untertitel:
A comparative study of low-energy heavy ion elastic recoil detection, high-resolution Rutherford backscattering and secondary ion mass spectrometry 
Zeitschrift:
Nuclear Instruments and Methods in Physics Research Section B 
Jahrgang:
249 
Heftnummer:
1-2 Special Issue 
Jahr:
2006 
Seiten von - bis:
847-850 
Sprache:
Englisch 
Stichwörter:
Heavy ions ; Microelectronics ; Rutherford backscattering spectroscopy ; Secondary ion mass spectrometry ; Silicon ; Depth resolution ; ERDA ; Light elements ; Thin film analysis ; Thin films 
Abstract:
The analysis of thin films in the range of 10 nm and less has become very important in microelectronics. The goal of this article is an evaluation of low-energy TOF-ERDA (time-of-flight elastic recoil detection analysis) in comparison with low-energy SIMS (secondary ion mass spectrometry) and HRBS (high-resolution Rutherford backscattering spectrometry), using a thin SiO2/Si3N4/SiO2 stack as a test vehicle. Comparisons are made on the depth resolution, its loss as a function of depth and the qua...    »
 
ISSN:
0168-583X 
Fakultät:
Fakultät für Luft- und Raumfahrttechnik 
Institut:
LRT 2 - Institut für angewandte Physik und Messtechnik 
Professur:
Dollinger, Günther 
Open Access ja oder nein?:
Nein / No