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Document type:
Konferenzbeitrag / Conference Paper
Title:
Investigation of the internal behavior of a vertical DMOS transistor under short duration, high current stress by an optical thermal mapping method
Title of conference publication:
Proceedings of the 6th International Seminar on Power Semiconductors (ISPS), Prague 2002
Conference title:
International Seminar on Power Semiconductors (6., 2002, Prag)
Venue:
Prague, Czech Republic
Year of conference:
2002
Date of conference beginning:
02.09.2002
Date of conference ending:
04.09.2002
Year:
2002
Pages from - to:
63-67
Language:
Englisch
Department:
Fakultät für Elektrotechnik und Technische Informatik
Institute:
ETTI 1 - Institut für Physik, Elektrotechnik und Automatisierungstechnik
Chair:
Groos, Gerhard
Open Access yes or no?:
Nein / No
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