Highly oriented diamond films can play an important role in replacing single crystal diamond for their use as substrates in active electronic devices. However, for practical applications, large, homogenous films with low defect densities are required. The focus of our investigations is the nucleation of highly oriented diamond on (001) silicon via Bias Enhanced Nucleation (BEN) over large areas. A modified BEN process using repetitive pulse bias 'RP-BEN' was developed, resulting in an area of oriented nucleation of up to 30 cm2. The density of azimuthally oriented diamond seeds was measured by scanning electron microscopy (SEM) images and found to be 8 × 108 cm-2 with only 30    «

Highly oriented diamond films can play an important role in replacing single crystal diamond for their use as substrates in active electronic devices. However, for practical applications, large, homogenous films with low defect densities are required. The focus of our investigations is the nucleation of highly oriented diamond on (001) silicon via Bias Enhanced Nucleation (BEN) over large areas. A modified BEN process using repetitive pulse bias 'RP-BEN' was developed, resulting in an area of or...    »